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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 193, Issue 1-4, 2002, Pages 294-298

Molecular dynamics simulation of ion-beam-amorphization of Si, Ge and GaAs

(3) Nord, Janne a Nordlund, K a Keinonen, J a

a UNIVERSITY OF HELSINKI (Finland)

Author keywords

Amorphization; Defects; Irradiation; Semiconductors

Indexed keywords

CHEMICAL BONDS; COMPUTER SIMULATION; CRYSTALLIZATION; DEFECTS; GERMANIUM; ION BEAMS; IRRADIATION; MOLECULAR DYNAMICS; SEMICONDUCTING GALLIUM ARSENIDE; SILICON;

ION IRRADIATION;

AMORPHIZATION;

EID: 0036609668 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(02)00794-2 Document Type: Conference Paper

Times cited : (25)

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