MD simulation of ion beam induced crystallization and amorphization in silicon

Radiation Effects and Defects in Solids

Volumn 141, Issue 1-4, 1997, Pages 161-174

  Weber, B ^a   Stock, D M ^a   Gartner K ^a   Wende, C ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

Ion beam induced amorphization; Ion beam induced crystallization; Molecular dynamics simulations; Silicon

Indexed keywords

AMORPHIZATION; AMORPHOUS SILICON; COMPUTER SIMULATION; CRYSTAL MICROSTRUCTURE; CRYSTALLIZATION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); ION BEAMS; ION IMPLANTATION; MOLECULAR DYNAMICS; RADIATION EFFECTS;

STILLINGER WEBER POTENTIAL;

SEMICONDUCTING SILICON;

EID: 0030655715     PISSN: 10420150     EISSN: None     Source Type: Journal    
DOI: 10.1080/10420159708211567     Document Type: Article

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