Atomic-level characterisation of ion-induced amorphisation in compound semiconductors

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 391-395

  Ridgway, M C ^a,d   Glover, C J ^a   Bezakova, E ^a   Byrne, A P ^a   Foran, G J ^b   Yu, K M ^c  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b AUSTRALIAN NUCLEAR SCIENCE AND TECHNOLOGY ORGANISATION   (Australia)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^d CNRS   (France)

Author keywords

Defect characterisation; Extended X ray absorption fine structure; GaAs; InP; Ion implantation; Perturbed angular correlation

Indexed keywords

DEBYE-WALLER FACTOR; EXTENDED X RAY ABSORPTION FINE STRUCTURE (EXAFS); PERTURBED ANGULAR CORRELATION (PAC);

AMORPHIZATION; AMORPHOUS MATERIALS; CHEMICAL BONDS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; ION IMPLANTATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; X RAY ANALYSIS;

SEMICONDUCTOR MATERIALS;

EID: 0033513656     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00766-6     Document Type: Article

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