SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 507-510, Issue , 2002, Pages 624-629

Influence of the InAs coverage on the phonon-assisted recombination in InAs/GaAs quantum dots

(6) Rudamas, C a,b Martinez Pastor J a Garcia Cristobal A a Roussignol, Ph b Garcia J M c Gonzalez L c

a UNIVERSITY OF VALENCIA (Spain)

b 24 Rue Lhomond (France)

c INSTITUTO DE MICROELECTRÓNICA DE MADRID (Spain)

Author keywords

Gallium arsenide; Indium arsenide; Light scattering; Molecular beam epitaxy; Photoluminescence; Quantum effects

Indexed keywords

LIGHT SCATTERING; MOLECULAR BEAM EPITAXY; PHONONS; PHOTOLUMINESCENCE; QUANTUM THEORY; RAMAN SCATTERING; RELAXATION PROCESSES; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; SPECTRUM ANALYSIS;

EXCITATION ENERGIES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036609591 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(02)01326-2 Document Type: Conference Paper

Times cited : (1)

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