Hot carrier relaxation in InAs/GaAs quantum dots

Physica B: Condensed Matter

Volumn 272, Issue 1-4, 1999, Pages 8-11

  Heitz, R ^a   Mukhametzanov, I ^b   Born, H ^a   Grundmann, M ^a   Hoffmann, A ^a   Madhukar, A ^b   Bimberg, D ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b University of Southern California ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRON TRANSITIONS; ELECTRON TUNNELING; EMISSION SPECTROSCOPY; ENERGY TRANSFER; HOT CARRIERS; PHOTOLUMINESCENCE; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS;

CARRIER DYNAMICS; CARRIER RELAXATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033330791     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00366-X     Document Type: Article

References (13)

1. Heitz R.et al. Phys. Rev. B. 56:1997;10435.
2. Benisty H.et al. Phys. Rev. B. 44:1991;10945.
3. Inoshita T., Sakaki H. Phys. Rev. B. 46:1992;7260.
4. Bockelmann U., Egeler T. Phys. Rev. B. 46:1992;15574.
5. Efros A.L.et al. Solid State Commun. 93:1995;281.
6. Bimberg D.et al. Quantum Dot Hetrostructures. 1999;Wiley, New York.
7. Heitz R.et al. Phys. Rev. B. 57:1998;9050.
8. Mukhametzhanov I.et al. Appl. Phys. Lett. 73:1998;1341.
9. Heitz R.et al. Phys. Rev. B. 58:1998;R10151.
10. Heitz R.et al. J. Electron. Mater. 28:1999;520.
11. Stier O.et al. Phys. Rev. B. 59:1999;5688.
12. Yang W.et al. Phys. Rev. B. 56:1997;13314.
13. Heitz R.et al. Phys. Rev. Lett. 78:1997;4071.