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Volumn 43, Issue 3-5, 2002, Pages 251-255

Lead chalcogenide on silicon infrared sensors: Focal plane array with 96 × 128 pixels on active Si-chip

Author keywords

Dislocation glide; Heteroepitaxy; Infrared sensors; Lead chalcogenide; Narrow gap semiconductors; Si substrate; Thermal imaging

Indexed keywords

ARRAYS; ELECTRIC RESISTANCE; INFRARED IMAGING; LEAD COMPOUNDS; PHOTOVOLTAIC EFFECTS; QUANTUM THEORY; READOUT SYSTEMS; SEMICONDUCTING SILICON COMPOUNDS; SILICON SENSORS; SPURIOUS SIGNAL NOISE;

EID: 0036607074     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1350-4495(02)00148-2     Document Type: Article
Times cited : (22)

References (13)
  • 1
    • 0033698383 scopus 로고    scopus 로고
    • Review of HgCdTe photodiodes for IR detection
    • (2000) Proc. SPIE , vol.4028 , pp. 320-330
    • Reine, M.B.1
  • 2
    • 0032629802 scopus 로고    scopus 로고
    • Photovoltaic IV-VI on silicon infrared devices for thermal imaging applications
    • (1999) Proc. SPIE , vol.3629 , pp. 52-62
    • Zogg, H.1
  • 10
    • 0009515760 scopus 로고    scopus 로고
    • The chips were designed by W. Buttler, Essen, and fabricated at the Fraunhofer Institut für mikroelektronische Schaltungen, Duisburg, Germany
  • 11
    • 0029289252 scopus 로고
    • Hydrogen on Si: Ubiquitous surface termination after wet-chemical processing
    • (1995) Appl. Phys. A , vol.60 , pp. 347-363
    • Pietsch, G.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.