InAs quantum dots in InAlAs matrix on (0 0 1)InP substrates grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 187, Issue 3-4, 1998, Pages 564-568

  Li, H ^a   Wang, Z ^a   Liang, J ^a   Xu, B ^a   Wu, J ^a   Gong, Q ^a   Jiang, C ^a   Liu, F ^a   Zhou, W ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

InAs InAlAs InP; Molecular beam epitaxy; Quantum dots

Indexed keywords

MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; X RAY DIFFRACTION ANALYSIS;

HETEROEPITAXIAL GROWTH;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0032474185     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00008-6     Document Type: Article

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