RF electro-thermal modeling of LDMOSFETs for power-amplifier design

IEEE Transactions on Microwave Theory and Techniques

Volumn 50, Issue 6, 2002, Pages 1561-1570

  Akhtar, Siraj ^b,c   Roblin, Patrick ^a,b   Lee, Sunyoung ^b   Ding, Xiaohui ^b,d   Yu, Shuang ^b,e   Kasick, Julie ^b,f   Strahler, Jeffrey ^g,h  

^a IEEE   (United States)

^b OHIO STATE UNIVERSITY   (United States)

^c TEXAS INSTRUMENTS   (United States)

^d MOTOROLA INC   (United States)

^e Keithley Instruments Inc   (United States)

^f United States Patent and Trademark Office   (United States)

^g NOKIA RESEARCH CENTER   (United States)

^h Celiant Corporation   (United States)

Author keywords

B spline representation; Electrothermal FET model; LDMOSFET; Nonquasi static equivalent circuit; RF power amplifiers

Indexed keywords

ELECTRO-THERMAL MODELING;

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; HARMONIC ANALYSIS; MICROWAVE MEASUREMENT; MOSFET DEVICES; SIGNAL PROCESSING; TENSORS; THERMAL EFFECTS;

POWER AMPLIFIERS;

EID: 0036601953     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2002.1006418     Document Type: Article

References (19)

1. GaAs, MOS, bipolar vie for power applications
2. High power RF-LDMOS transistors for base station applications
3. Thermal and package performance limitations in LDMOSFET's for RFIC applications
4. New measurement-based technique for RF LDMOS nonlinear modeling
5. 40-GHz/150-ns versatile pulsed measurement system for microwave transistor isothermal characterization
6. Technology independent device modeling for simulation of integrated circuits for FET technologies
7. A universal large/small signal 3-terminal FET model using a nonquasi-static charge-based approach
8. A new dynamic electro-thermal nonlinear model for silicon RF LDMOSFETs
9. A MESFET model for use in the design of GaAs integrated circuits
10. The RF MOSFET line: RF power field effect transistor: N-channel enhancement-mode lateral MOSFET
11. B-spline based, large-signal DC and microwave-model for SOI-MOSFETs
12. Iso-thermal DC and microwave characterizations of power RF silicon LDMOSFETs
13. New nonquasi-static theory for extracting small-signal parameters applied to LDMOSFETs
14. Accurate SOI MOSFET characterization at microwave frequencies for device performance optimization and analog modeling
15. Improved small-signal equivalent circuit model and large-signal state equations for the MOSFET/MODFET wave equation