New Non-Quasi-Static Theory for Extracting Small-Signal Parameters Applied to LDMOSFETs

IEEE Microwave and Guided Wave Letters

Volumn 10, Issue 8, 2000, Pages 322-324

  Roblin, Patrick ^a   Akhtar, Siraj ^a   Strahler, Jeffrey ^b  

^a The Ohio State University   (United States)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

FET equivalent circuits; LDMOSFET; microwave small signal modeling; non quasi static; parameter extraction

Indexed keywords

NON-QUASI-STATIC CHARGING; PARASITIC RESISTANCE;

ELECTRIC NETWORK TOPOLOGY; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; PROBLEM SOLVING; SEMICONDUCTOR DEVICE MODELS;

MOSFET DEVICES;

EID: 0034239084     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.862228     Document Type: Article

References (9)

1. Collantes, J. J. Raoux, R. Quere, and A. Suarez, “New measurement-based technique for RF LDMOS nonlinear modeling,” IEEE Microwave Guided Wave Lett., vol. 8, pp. PAGE NOS?-, Oct. 1998.
2. W. R. Curtice, J. A. Pla Bridges, T. Liang, and E. E. Shumate, “A new dynamic electro-thermal nonlinear model for silicon RF LDMOS FETs,” Microwave Symp. 99, vol. 2, pp. 419-422, 1999.
3. S. L. Lee, H. K. Yu, C. S. Kim, J. G. Koo, and K. S. Nam, “A novel approach to extracting small-signal model parameters of Silicon MOSFET's,” IEEE Microwave Guided Wave Lett., vol. 7, Mar. 1997.
4. J. P. Raskin, G. Dambrine, and R. Gillon, “Direct extraction of the series equivalent circuit parameters for the small-signal model of SOI MOSFET's,” IEEE Microwave Guided Wave Lett., vol. 7, pp. 408-410, Dec. 1997.
5. F. D. King, P. Winson, A. D. Snider, L. Dunleavy, and D. P. Levinson, “Math methods in transistor modeling: Condition numbers for parameter extraction,” IEEE Trans. Microwave Theory Tech., vol. 46, pp. 1313-1314, Sept. 1998.
6. J.-P. Raskin, R. Gillon, J. Chen, D. Vanhoenacker-Janvier, and J.-P. Colinge, “Accurate SOI MOSFET characterization at microwave frequencies for device performance optimization and analog modeling,” IEEE Trans. Microwave Theory Tech., vol. 45, pp. 1017-1025, May 1998.
7. P. Roblin, S. C. Kang, and W. R. Liou, “Improved small-signal equivalent circuit model and large-signal state-equations for the MOSFET/MODFET wave equation,” IEEE Trans. Electron Devices, vol. 38, pp. 1706-1718, Aug. 1991.
8. S. Akhtar and P. Roblin, “B-spline based, large-signal DC and microwave-model for SOI-MOSFETs,” Analog Integr. Circuits Signal Process., to be published.
9. Motorola, “The RF MOSFET Line: RF Power Field Effect Transistor: N-Channel Enhancement-Mode Lateral MOSFET,” Motorola Semiconductor Technical Data.