Isothermal DC and microwave characterizations of power RF silicon LDMOSFETs

IEEE Transactions on Electron Devices

Volumn 48, Issue 12, 2001, Pages 2785-2789

  Akhtar, Siraj ^b   Roblin, Patrick ^a,b   Lee, Sunyoung ^b   Strahler, Jeffrey ^c  

^a IEEE   (United States)

^b The Ohio State University   (United States)

^c NOKIA RESEARCH CENTER   (United States)

Author keywords

Electrothermal modeling; Isothermal IV characteristic; LDMOSFET; Low frequency dispersion; Pulsed IV; Self heating

Indexed keywords

INFRARED SENSORS;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; ELECTROMAGNETIC DISPERSION; HEAT RESISTANCE; OPTICAL SENSORS; POWER AMPLIFIERS; TRANSCONDUCTANCE;

MOSFET DEVICES;

EID: 0035696784     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.974704     Document Type: Article

References (11)

1. Thermal and package performance limitations in LDMOSFETs for RFIC applications
2. New nonquasi-static theory for extracting small-signal parameters applied to LDMOSFETs
3. A physical charge-based model for non-fully depleted SOI MOSFETs and its use in assessing floating-body effects in SOI CMOS circuits
4. B-spline based, large-signal DC and microwave-model for SOI-MOSFETs
5. The RF MOSFET line: RF power field effect transistor: N-channel enhancement-mode lateral MOSFET
6. Self-heating effects in SOI MOSFETs and their measurement by small-signal conductance techniques
7. Temperature dependent MOSFET RF large-signal model incorporation self heating effects
8. Technology independent device modeling for simulation of integrated circuits for FET technologies
9. 40-GHz/150-ns versatile pulsed measurement system for microwave transistor isothermal characterization