Interfacial structure and electrical characteristics of LaNiO3/Si contacts

Journal of Materials Research

Volumn 17, Issue 6, 2002, Pages 1350-1355

  Wu, Tai Bor ^a   Liu, Chin Lin ^a   Liu, Yu Wen ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRIC VARIABLES MEASUREMENT; LANTHANUM COMPOUNDS; MAGNETRON SPUTTERING; RAPID THERMAL ANNEALING; SCHOTTKY BARRIER DIODES; SILICON; THERMAL EFFECTS; THIN FILMS;

CLEAN INTERFACE; INTERFACIAL OXIDE LAYER; INTERFACIAL STRUCTURE;

INTERFACES (MATERIALS);

EID: 0036601396     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2002.0201     Document Type: Article

References (18)