AC effects in IC reliability

Microelectronics Reliability

Volumn 36, Issue 11-12 SPEC. ISS., 1996, Pages 1611-1617

  Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTROMIGRATION; ELECTRONS; GATES (TRANSISTOR); HOT CARRIERS; OXIDES; RELIABILITY; SEMICONDUCTOR DEVICE MODELS; ELECTRIC FIELD EFFECTS; MATHEMATICAL MODELS; MOSFET DEVICES; STRESSES;

ALTERNATING CURRENT (AC) EFFECTS; GATE OXIDE BREAKDOWN; INTEGRATED CIRCUIT (IC) RELIABILITY;

INTEGRATED CIRCUITS;

EID: 0030273972     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2714(96)00158-8     Document Type: Review

References (10)

1. J.Y. Choi, P.K. Ko, C. Hu, "Hot Carrier Induced MOSFET Degradation Under AC Stress," IEEE Electron Device Letters, pp. 333-335 (Aug. 1987).
2. W. Weber, R Thewes, "Hot Carrier Related Device Reliability for Digital and Analogue CMOS Circuits," Semicond. Sci. Technol., pp. 1432-1443 (1995).
3. K. Quader, P. Ko, C. Hu, "Projecting CMOS Circuit Hot-Carrier Reliability from DC Device Lifetime," International Electron Device Meeting, pp. 511-514 (1993).
4. K. Quader, P. Fang, J. Yue, P. Ko, C. Hu, "Hot-Carrier Design Rules for Translating Device Degradation to CMOS Digital Circuit Degradation," IEEE Trans. Electron Devices, pp. 681-691 (May 1994).
5. B.K. Liew, N.W. Cheung, C. Hu, "Projecting Interconnect EM Lifetime for Arbitrary Current Waveforms," IEEE Trans. Electron Devices, p. 1343 (1990).
6. L.M. Ting, J.S. May, W. Hunter, J. McPherson, "AC Electromigration of Multilayered Interconnects," 311th Int. Reliability Phys. Symp., p. 311 (1993).
7. J. Tao, J.F. Chen, N.W. Cheung, C. Hu, "Modeling and Characterizing Electromigration Failures Under Bidirectional Current Stress," IEEE Trans. Electron Devices, pp. 800-808 (May 1996).
8. Y. Fong, I.C. Chen, J. Lee, S. Holland, C. Hu, "Dynamic Stressing of Thin Oxides," IEDM, pp. 664-667 (1986).
9. E. Rosenbaum, Z. Liu, C. Hu, "The Effect of Stress Waveform on MOSFET Performance," IEDM, pp. 719-722 (1991).
10. E. Rosenbaum, C. Hu, "Silicon Dioxide Breakdown Lifetime Enhancement Under Bipolar Bias Conditions," IEEE Trans. Electron Devices, pp. 2287-2295 (Dec. 1993).