Ultra-shallow junction formation with antimony implantation

IEICE Transactions on Electronics

Volumn E85-C, Issue 5, 2002, Pages 1091-1097

  Shibahara, Kentaro ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Antimony; Dopant loss; Dopant pileup; Shallow function; Sheet resistance

Indexed keywords

ARSENIC; DIFFUSION; ELECTRIC RESISTANCE; INTERFACES (MATERIALS); ION IMPLANTATION; MOSFET DEVICES; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ANTIMONY; SEMICONDUCTING SILICON COMPOUNDS;

DEPTH PROFILE; DOPANT LOSS; REDISTRIBUTION;

SEMICONDUCTOR JUNCTIONS;

EID: 0036579511     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (23)

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