Improvement in antimony-doped ultrashallow junction sheet resistance by dopant pileup reduction at the SiO2/Si interface

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2194-2197

  Shibahara, Kentaro ^a   Egusa, Kazuhiko ^a   Kamesaki, Koji ^a   Furumoto, Hiroaki ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Antimony; Dopant loss; Dopant pileup; Shallow junction; Sheet resistance

Indexed keywords

ION IMPLANTATION; MOSFET DEVICES; PHASE INTERFACES; RAPID THERMAL ANNEALING; SEMICONDUCTING ANTIMONY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

DOPANT LOSS; DOPANT PILEUP; ULTRASHALLOW JUNCTION SHEET RESISTANCE;

SEMICONDUCTOR JUNCTIONS;

EID: 0033723647     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2194     Document Type: Article

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