Integration of chemical vapor deposition titanium nitride for 0.25 μm contacts and vias

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 5, 1998, Pages 2729-2733

  Westerheim, A C ^a,b   Bulger, J M ^a,b   Whelan, C S ^a,c   Sriram, T S ^a,d   Elliott, L J ^a,b   Maziarz, J J ^a,b  

^a Digital Semiconductor   (United States)

^b INTEL CORPORATION   (United States)

^c RAYTHEON COMPANY   (United States)

^d HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001459769     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590264     Document Type: Article

References (9)

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