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Computational Materials Science

Volumn 24, Issue 1-2, 2002, Pages 33-41

Atomic processes at bonded Si-interfaces studied by molecular dynamics: Tayloring densities and bandgaps?

(3) Scheerschmidt, Kurt a Conrad, Detlef a Belov, Alexander a

a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS (Germany)

Author keywords

Ab initio density functional theory; Band structure; Bonded interfaces; Dreidl; Molecular dynamics; Structural units; Twist boundary; Wafer bonding

Indexed keywords

COMPUTER SIMULATION; ELECTRON TRANSITIONS; ENERGY GAP; INTERFACES (MATERIALS); PROBABILITY DENSITY FUNCTION; SILICON WAFERS;

ATOMIC PROCESSES;

MOLECULAR DYNAMICS;

EID: 0036577775 PISSN: 09270256 EISSN: None Source Type: Journal
DOI: 10.1016/S0927-0256(02)00162-3 Document Type: Conference Paper

Times cited : (9)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.