Extended point defect structures at intersections of screw dislocations in Si: A molecular dynamics study

Physica Status Solidi (A) Applied Research

Volumn 171, Issue 1, 1999, Pages 159-166

  Belov, A Yu ^a,b   Scheerschmidt, K ^a   Gosele U ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b SHUBNIKOV INSTITUTE OF CRYSTALLOGRAPHY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; CRYSTAL SYMMETRY; DISLOCATIONS (CRYSTALS); HIGH RESOLUTION ELECTRON MICROSCOPY; MOLECULAR DYNAMICS; POINT DEFECTS; VACUUM APPLICATIONS;

TERSOFF INTERATOMIC POTENTIAL;

SEMICONDUCTING SILICON;

EID: 0032758803     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199901)171:1<159::AID-PSSA159>3.0.CO;2-I     Document Type: Article

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