Size dependence of the magnetic and electrical properties of the spin-valve transistor

IEEE Transactions on Electron Devices

Volumn 49, Issue 5, 2002, Pages 847-851

  Kim, Sungdong ^b   Van't Erve, O M J ^b   Vlutters, R ^b   Jansen, R ^b   Lodder, J C ^a,b  

^a IEEE

^b UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

Hot electron; Magnetic devices; Reliability; Schottky diodes; Spin valve transistor

Indexed keywords

CURRENT DENSITY; ETCHING; ION BEAMS; LEAKAGE CURRENTS; MAGNETIC FIELDS; MAGNETIC PROPERTIES; PHOTORESISTS; RELIABILITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; SIZE DETERMINATION;

HOT ELECTRON; NEGATIVE TONE PHOTORESIST; SILICON-ON-INSULATOR WAFER; SPIN-VALVE TRANSISTOR; WET ETCHING;

TRANSISTORS;

EID: 0036565630     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.998594     Document Type: Article

References (10)

1. Perpendicular hot electron spin-valve effect in a new magnetic field sensor: The spin-valve transistor
2. Room temperature-operating spin-valve transistor formed by vacuum bonding
3. Magnetoelectronics
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5. Low-field magnetocurrent above 200% in a spin-valve transistor at room temperature
6. Metal bonding during sputter film deposition
7. Micromachining applications of a high resolution ultrathick photoresist
8. Electrical reliability of giant magneto-resistive recording sensors
9. Electromigration reliability study of a GMR spin valve device
10. Electromigration-induced failure analyzes of single layred NiFe permalloy thin films for giant magnetoresistive read head