Low-field magnetocurrent above 200% in a spin-valve transistor at room temperature

Journal of Magnetism and Magnetic Materials

Volumn 214, Issue 1, 2000, Pages 1-

  Anil Kumar, P S ^a   Jansen, R ^a   Van 'T Erve, O M J ^a   Vlutters, R ^a   De Haan, P ^a   Lodder, J C ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT; ELECTRONIC STRUCTURE; ELECTRONS; FERROMAGNETIC MATERIALS; GOLD; HOT CARRIERS; MAGNETIC FIELD EFFECTS; MAGNETIC PROPERTIES; NICKEL ALLOYS; SCHOTTKY BARRIER DIODES; TRANSISTORS;

HOT ELECTRONS; MAGNETOCURRENT; SPIN-VALVE TRANSISTOR (SVT);

MAGNETIC SEMICONDUCTORS;

EID: 0002910793     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0304-8853(00)00052-4     Document Type: Article

References (23)

1. Baibich M.N., Broto J.M., Fert A., Van Dau F.N., Petroff F., Etienne P., Creuzet G., Friederich A., Chazelas J. Phys. Rev. Lett. 61:1988;2427.
2. Binach G., Grunberg P., Saurenbach F., Zinn W. Phys. Rev. B. 39:1989;4828.
3. Prinz G.A. Science. 282:1998;1660.
4. Parkin S.S.P., Li Z.G., Smith D.J. Appl. Phys. Lett. 58:1991;2710.
5. Parkin S.S.P., Rabedeau T. Appl. Phys. Lett. 68:1996;1162.
6. McGuire T.R., Potter R.I. IEEE Trans. Magn. MAG-11:1975;1018.
7. Shinjo T., Yamamoto H. J. Phys. Soc. Japan. 59:1990;3061.
8. Yamamoto H., Motomura Y., Anno T., Shinjo T. J. Magn. Magn. Mater. 126:1993;437.
9. Gijs M.A.M., Lenczowski S.K.J., Giesbers J.B. Phys. Rev. Lett. 70:1993;3343.
10. Moodera J.S., Kinder L.R., Wong T.M., Meservey R. Phys. Rev. Lett. 74:1995;3273.
11. Parkin S.S.P., Roche K.P., Samant M.G., Rice P.M., Beyers R.B., Scheuerlein R.E., O'Sullivan E.J., Brown S.L., Bucchigano J., Abraham D.W., Lu Y., Rooks M., Trouilloud P.L., Wanner R.A., Gallagher W.J. J. Appl. Phys. 85:1999;5828.
12. Alonso J.A., Martínez J.L., Martínez-Lope M.J., Casais M.T., Fernández-Díaz M.T. Phys. Rev. Lett. 82:1999;189.
13. Yang F.Y., Liu K., Hong K.M., Reich D.H., Searson P.C., Chien C.L. Science. 284:1999;1335.
14. Garcia N., Munoz M., Zhao Y.W. Phys. Rev. Lett. 82:1999;2923.
15. Monsma D.J., Lodder J.C., Popma Th.J.A., Dieny B. Phys. Rev. Lett. 74:1995;5260.
16. Monsma D.J., Vlutters R., Lodder J.C. Science. 281:1998;407.
17. Shimatsu T., Mollema R.H., Monsma D., Keim E.G., Lodder J.C. J. Vac. Sci. Technol. A. 16:1998;2125.
18. Mizushima K., Kinno T., Tanaka K., Yamauchi T. Phys. Rev. B. 58:1998;4660.
19. R. Jansen, P.S. Anil Kumar, O.M.J. van 't Erve, R. Vlutters, P. de Haan, J.C. Lodder, submitted for publication.
20. Detavernier C., Van Meirhaeghe R.L., Donaton R., Maex K., Cardon F. J. Appl. Phys. 84:1998;3226.
21. Sze S.M. Physics of Semiconductor Devices. 1969;Wiley, New York.
22. Yu Tsymbal E., Pettifor D.G. Phys. Rev. B. 54:1996;15314.
23. Zarate E., Apell P., Echenique P.M. Phys. Rev. B. 60:1999;2326.