A 90 v breakdown high temperature SOI lateral power nMOSFET

1998 4th International High Temperature Electronics Conference, HITEC 1998

Volumn , Issue , 1998, Pages 215-218

  Tsang, J C ^a   McKitterick, J B ^a   Zolnier, J A ^a   O'Connor, J M ^a  

^a AlliedSignal Microelectron and Technol Center   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PETROLEUM PROSPECTING; POWER MOSFET; SILICON ON INSULATOR TECHNOLOGY; TORQUE MOTORS;

DIGITAL PROCESS; ENGINE CONTROL; HIGH TEMPERATURE; LATERAL POWER MOS; OIL EXPLORATION; POWER DEVICES; SILICON ON INSULATOR (SOI); SOLENOID DRIVERS;

HIGH TEMPERATURE APPLICATIONS;

EID: 0009255929     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/HITEC.1998.676789     Document Type: Conference Paper

References (7)

1. W. P. Maszara et al., "An SOI Smartpower Solenoid Driver for 300°C Operation, " GOMAC, March 1996.
2. J. Gautier et al., "SO1 Floating-body, Device, and Circuit Issues, " IEDM Tech. Dig., 407, (1997).
3. C.-E. Chen et al., "Single-Transistor Latch in SOI MOSFET's, " IEEE Electron Device Lett. 9(12), 636 (1988).
4. A. Mogro-Campero, "Simple Estimate of Electromigration Failure in Metallic Thin Films, " J. Appl. Phys. 53(2), 1224, (1982).
5. R. Grzybowski, private communication.
6. G. Goetz et al., "Chromium Oxide Protection of High Temperature Conductors and Contacts, " Trans. Third Inter. High Temp. Elect. Cod., (1996).
7. G. Goetz et al., "Tungsten-based Metalization for High Temperature Conductors and Contacts, " Trans. Second Inter. High Temp. Elect. Cod., (1994).