Suppression of nitridation-induced interface traps and hole mobility degradation by nitrogen plasma nitridation

Electrochemical and Solid-State Letters

Volumn 5, Issue 4, 2002, Pages

  Ang, C H ^a   Tan, S S ^b   Lek, C M ^c   Lin, W ^a   Zheng, Z J ^a   Chen, T ^b   Cho, B J ^c  

^a CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

HOLE MOBILITY; HOLE TRAPS; INTERFACES (MATERIALS); NITRIDING; PLASMA APPLICATIONS; SILICA;

INTERFACE TRAP DENSITY; NITROGEN PLASMA NITRIDATION; ULTRATHIN OXIDES;

NITROGEN OXIDES;

EID: 0036535580     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1459682     Document Type: Article

References (16)