Gettering of transition metals in multicrystalline silicon for photovoltaic applications

Solid State Phenomena

Volumn 47-48, Issue , 1996, Pages 165-170

  Weber, E R ^a   McHugo, S A ^a   Hieslmair, H ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; DEEP LEVEL TRANSIENT SPECTROSCOPY; EFFICIENCY; GETTERS; POLYSILICON; RAPID THERMAL ANNEALING; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON SOLAR CELLS; SILICON WAFERS; SINGLE CRYSTALS; TRANSITION METALS;

DIFFUSION-LIMITED PROCESS; GETTERING TREATMENTS; MULTI-CRYSTALLINE SILICON; MULTICRYSTALLINE SILICON SOLAR CELL MATERIALS; PHOTOVOLTAIC APPLICATIONS; SINGLE CRYSTAL SILICON; SOLAR CELL EFFICIENCIES; SURFACE PHOTOVOLTAGES;

MONOCRYSTALLINE SILICON;

EID: 17544384164     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Article

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