External gettering for multicrystalline silicon wafers

Solid State Phenomena

Volumn 47-48, Issue , 1996, Pages 153-164

  Martinuzzi, S ^a   Perichaud I ^a  

^a Fac des Sciences et Techniques   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GRAIN BOUNDARIES; INDUCED CURRENTS; POINT DEFECTS; POLYSILICON; REMOVAL; SEMICONDUCTOR DEVICE MANUFACTURE;

CRYSTALLOGRAPHIC DEFECTS; DEFECTS AND IMPURITIES; LIGHT BEAM INDUCED CURRENTS; MINORITY CARRIER DIFFUSION LENGTH; MULTICRYSTALLINE SILICON WAFERS; RECOMBINATION ACTIVITY; RECOMBINATION STRENGTH; SCANNING INFRARED MICROSCOPIES;

SILICON WAFERS;

EID: 0002664225     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Article

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