Modeling of ionizing irradiation influence on Schottky-gate field-effect transistor

Microelectronics Reliability

Volumn 39, Issue 8, 1999, Pages 1247-1263

  Demarina, N V ^a   Obolensky, S V ^a  

^a LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EQUIVALENT CIRCUITS; GATES (TRANSISTOR); HYDRODYNAMICS; IONIZATION; MICROWAVE INTEGRATED CIRCUITS; MONTE CARLO METHODS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS;

SCHOTTKY-GATE FIELD EFFECT TRANSISTOR;

MESFET DEVICES;

EID: 0033349958     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00035-9     Document Type: Article

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