Ion irradiation induced defects in epitaxial GaAs layers

Solid-State Electronics

Volumn 42, Issue 2, 1998, Pages 277-282

  Arpatzanis, N ^a   Vlastou, R ^b   Konstantinidis, G ^c   Assmann, W ^d   Papastamatiou, M ^a   Gazis, E ^b   Papaioannou, G J ^a  

^a UNIVERSITY OF ATHENS   (Greece)

^b NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

^c INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^d UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALPHA PARTICLES; ANNEALING; CHARGE TRANSFER; CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; HEAVY IONS; ION BEAMS; ION BOMBARDMENT; MOLECULAR BEAM EPITAXY; REACTION KINETICS;

ARRHENIUS SIGNATURE; DEEP LEVELS; HEAVY ION IRRADIATION; PAIR RECOMBINATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031995399     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00221-9     Document Type: Article

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