Neutron irradiation of cold GaAs devices and circuits made with an ion-implanted monolithic process

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 388, Issue 3, 1997, Pages 399-407

  Battistoni, G ^a   Camin, D V ^a   Fedyakin, N ^a   Pessina, G ^a   Sala, P ^a  

^a INFN SEZIONE DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); ION IMPLANTATION; IRRADIATION; MESFET DEVICES; NEUTRON IRRADIATION; NEUTRONS; RADIATION EFFECTS; READOUT SYSTEMS; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE; TRANSFER FUNCTIONS;

IONIZATION SIGNAL; MONOLITHIC PREAMPLIFIERS; RADIATION RESISTANCE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031116997     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(96)01253-3     Document Type: Article

References (9)

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