Ab initio calculations on the dissociative reaction of As4 molecules

Applied Surface Science

Volumn 159, Issue , 2000, Pages 360-367

  Toyoda, K ^a   Hiraoka, Y S ^b   Naritsuka, S ^a   Nishinaga, T ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; DISSOCIATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH; VACUUM;

ENERGY BARRIERS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034207181     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00079-9     Document Type: Article

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