Growth parameter dependence of HVPE GaN and polarity and crystal quality of the grown layers

Journal of Crystal Growth

Volumn 237-239, Issue 1-4 II, 2002, Pages 1089-1093

  Namerikawa, Makoto ^a   Sato, Tomonari ^a   Takahashi, Osamu ^a   Suemasu, Takashi ^a   Hasegawa, Fumio ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

A1. Crystal structure; A1. Polarity; A2. Single crystal growth; A3. Chloride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

CRYSTAL STRUCTURE; DETERIORATION; HIGH TEMPERATURE EFFECTS; OPTIMIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS; SUBSTRATES; SURFACE TOPOGRAPHY; VAPOR PHASE EPITAXY;

BUFFER LAYER GROWTH; HIGH-TEMPERATURE GROWTH;

GALLIUM NITRIDE;

EID: 0036530472     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02075-9     Document Type: Article

References (10)