Mechanism of single-charge detection using electron-hole system in Si-wire transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 3 A, 2002, Pages 1209-1213

  Fujiwara, Akira ^a   Takahashi, Yasuo ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

Electron hole system; Recombination; Si wire; Silicon on insulator; Single charge; Single electron; Single hole

Indexed keywords

ELECTRIC FIELDS; ELECTRONS; INTERFACES (MATERIALS); SILICON ON INSULATOR TECHNOLOGY; WIRE;

ELECTRON-HOLE SYSTEM; SILICON WIRES;

MOSFET DEVICES;

EID: 0036508818     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.1209     Document Type: Article

References (13)