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Diamond and Related Materials

Volumn 11, Issue 3-6, 2002, Pages 1258-1262

Silicon carbide Schottky and ohmic contact process dependence

(5) Badila, M a Brezeanu, G b Millan, J c Godignon, P c Banu, V d

a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES (Romania)

b UNIVERSITY POLITEHNICA OF BUCHAREST (Romania)

c UNIVERSITAT AUTÒNOMA DE BARCELONA (Spain)

d Baneasa SA (Romania)

Author keywords

Processing; Schottky diode; Silicon carbide (SiC)

Indexed keywords

ANNEALING; HIGH TEMPERATURE EFFECTS; OHMIC CONTACTS; SILICON CARBIDE;

CONTACT PROCESSES;

SCHOTTKY BARRIER DIODES;

SILICON CARBIDE;

EID: 0036508527 PISSN: 09259635 EISSN: None Source Type: Journal
DOI: 10.1016/S0925-9635(01)00711-7 Document Type: Article

Times cited : (15)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.