Nearly ideal SiC Schottky barrier device edge termination

Proceedings of the International Semiconductor Conference, CAS

Volumn 1, Issue , 1999, Pages 183-186

  Brezeanu, G ^a   Badila, M ^a   Millan, J ^a   Godignon, Ph ^a   Locatelli, Marie Laure ^a   Chante, J P ^a   Lebedev, A ^a   Dilimot, G ^a   Enache, I ^a   Bica, G ^a   Banu, V ^a  

^a UNIVERSITY POLITEHNICA OF BUCHAREST   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC BREAKDOWN OF SOLIDS; SILICON CARBIDE; THERMIONIC EMISSION;

EDGE TERMINATION PROCESS; EPILAYERS;

SCHOTTKY BARRIER DIODES;

EID: 0033331253     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (5)