Results of irradiation tests on standard planar silicon detectors with 7-10 MeV protons

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 479, Issue 2-3, 2002, Pages 487-497

  Bechevet, D ^a   Glaser, M ^b   Houdayer, A ^a   Lebel, C ^a   Leroy, C ^a   Moll, M ^b   Roy, P ^a  

^a UNIVERSITÉ DE MONTRÉAL   (Canada)

^b CERN   (Switzerland)

Author keywords

Dectectors ageing; Low energy proton irradiation; Radiation hardness factors; Silicion detectors; Standard planar silicion diodes

Indexed keywords

AGING OF MATERIALS; DOPING (ADDITIVES); HARDNESS; PROTON IRRADIATION; SILICON;

SILICON DETECTORS;

PARTICLE DETECTORS;

EID: 0036494783     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(01)00925-1     Document Type: Article

References (30)

1. Study of the electrical properties and charge collection of silicon detectors under neutron, proton and gamma irradiation
2. TRIM (Transport of ions in matter), version 95.4
3. Average silicon displacement kerma factor at 1 MeV
4. Non ionizing energy deposition in silicon for radiation damage studies