High-performance In0.5Al0.5As/In0.5Ga0.5As high electron mobility transistors on GaAs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 11, 1996, Pages 5642-5645

  Higuchi, Katsuhiko ^a   Kudo, Makoto ^a   Mori, Mitsuhiro ^a   Mishima, Tomoyoshi ^a  

^a HITACHI LTD   (Japan)

Author keywords

HEMT; InAlAs InGaAs; InP; Lattice mismatch; Millimeter wave; Step graded buffer

Indexed keywords

INDIUM ALUMINUM ARSENIDE; INDIUM GALLIUM ARSENIDE; LATTICE MISMATCH; STEP GRADED BUFFER;

MILLIMETER WAVES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES; TRANSCONDUCTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030284882     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.5642     Document Type: Article

References (21)

1. L. D. Nguyen, A. S. Brown, M. A. Thompson and L. M. Jelloian: IEEE Trans. Electron Devices 39 (1992) 2007.
2. P. Ho, M. Y. Kao, P. C. Chao, K. H. G. Duh, J. M. Ballingall, S. T. Allen, A. J. Tessmer and P. M. Smith: Electron. Lett. 27 (1991) 325.
3. U. K. Mishra, A. S. Brown, L. M. Jelloian, M. Thompson, L. D. Nguyen and S. E. Rosenbaum: IEEE IEDM Tech. Dig. (1989) p. 101.
4. L. D. Nguyen, A. Brown, M. Delaney, U. Mishra, L. Larson, L. Jelloian, M. Melendes, C. Hooper and M. Thompson: IEEE IEDM Tech. Dig. (1989) p. 105.
5. P. C. Chao, A. J. Tessmer, K. H. G. Duh, P. Ho, M. Y. Kao, P. M. Smith, J. M. Ballingall, S.-M. J. Liu and A. A. Jabra: IEEE Electron Device Lett. 11 (1990) 59.
6. T. Enoki, K. Arai, T. Akazaki and Y. Ishii: IEICE Trans. Electron. E 76-C (1993) 1402.
7. P. Win, Y. Druelle, P. Legry, S. Lepilliet, A. Gappy, Y. Cordier and J. Favre: Electron. Lett. 29 (1993) 169.
8. G.-W. Wang, Y.-K. Chen, W. J. Schaff and L. F. Eastman: IEEE Trans. Electron Devices 35 (1992) 818.
9. K. Inoue, J. C. Harmand and T. Matsuno: J. Cryst. Growth 111 (1991) 313.
10. T. Mishima, K. Higuchi, M. Mori and M. Kudo: J. Cryst. Growth 150 (1995) 1230.
11. J. M. Vandenberg, H. Temkin, R. A. Hamm and M. A. DiGiuseppe: J. Appl. Phys. 53 (1982) 7385.
12. P. Zwicknagl, S. D. Mukherjee, P. M. Capani, H. Lee, H. T. Griem, L. Rathbun, J. D. Berry, W. L. Jones and L. F. Eastman: J. Vac. Sci. Technol. B 4 (1986) 476.
13. T. C. Shen, G. B. Gao and H. Morkoc: J. Vac. Sci. Technol. B 10 (1992) 2113.
14. L. G. Shantharama, H. Schumacher, H. P. Leblanc, R. Esagui, R. Bhat and M. Koza: Electron. Lett. 26 (1990) 1127.
15. A. Lahav, F. Ren and R. F. Kopf: Appl. Phys. Lett. 54 (1989) 1693.
16. K. Onda, A. Fujita, E. Mizuki, Y. Hori, N. Samoto and M. Kuzuhara: IEEE MTT-S Digest (1994) p. 261.
17. A. S. Wakita, N. Moll, S. J. Rosner and A. Fischer-Colbrie: J. Vac. Sci. Technol. B 13 (1995) 2092.
18. S. Kuroda, N. Harada, T. Katakami and T. Mimura: IEEE Electron Device Lett. 8 (1987) 389.
19. Y. Ando and T. Itoh: IEEE Trans. Electron Devices 36 (1989) 1036.
20. K. Higuchi, M. Kudo, M. Mori and T. Mishima: Proc. Indium Phosphide and Related Materials (1995) p. 741.
21. M. Chertouk, H. Heiß, D. Xu, S. Kraus, W. Klein, G. Böhm, G. Tränkle and G. Weimann: Proc. Indium Phosphide and Related Materials (1995) p. 737.