Metamorphic HFETs on GaAs with InP-subchannels for device performance improvements

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 182-185

  Gassler C ^a   Ziegler, V ^a   Wolk C ^a   Deufel, R ^a   Berlec, F J ^a   Kab N ^b   Kohn, E ^b  

^a DAIMLER AG   (Germany)

^b UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; ELECTRON MOBILITY; IMPACT IONIZATION; LATTICE CONSTANTS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SURFACE ROUGHNESS; TRANSCONDUCTANCE;

HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFET);

FIELD EFFECT TRANSISTORS;

EID: 0034452653     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2000.904288     Document Type: Article

References (6)

1. InP-based and metamorphic devices for multifunctional MMICs in mm-wave communication systems
2. 1-xAs HEMTs on GaAs substrate: A new structure parameter
3. 0.57 as metamorphic HEMT on GaAs substrate with 850mW/mm output power density
4. On-state and off-state breakdown in GaInAs/InP composite-channel HEMT's with variable GaInAs channel thickness
5. K-band GaInAs/InP channel power HEMTs
6. Design and characteristics of InGaAs/InP composite-channel HFETs