Preparation and properties of lead titanate gate ion-sensitive field-effect transistors by the sol-gel method

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 2 A, 2002, Pages 942-948

  Jan, Shiun Sheng ^a   Chen, Ying Chung ^a   Chou, Jung Chuan ^a,c   Cheng, Chien Chuan ^b   Lu, Chun Te ^b  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c DE LIN INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

EIS; ISFET; PbTiO3; pH response; Sol gel; The point of zero charge

Indexed keywords

CAPACITANCE MEASUREMENT; FABRICATION; GATES (TRANSISTOR); IONS; PERMITTIVITY; PH EFFECTS; SEMICONDUCTING LEAD COMPOUNDS; SENSITIVITY ANALYSIS; SOL-GELS; VOLTAGE MEASUREMENT;

METAL-INSULATOR-SEMICONDUCTOR (MIS) STRUCTURES;

ION SENSITIVE FIELD EFFECT TRANSISTORS;

EID: 0036478634     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.942     Document Type: Article

References (26)