Study on the hysteresis effect of pH-ISFET based on Beckman ΦTM 110 (Si3N4 gate pH-ISFET)

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4078, Issue , 2000, Pages 793-800

  Chou, Jung Chuan ^a   Tseng, Yu Neng ^a  

^a NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; GATES (TRANSISTOR); HYSTERESIS; PH EFFECTS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; VOLTAGE MEASUREMENT;

CONSTANT VOLTAGE-CURRENT CIRCUITS;

ION SENSITIVE FIELD EFFECT TRANSISTORS;

EID: 0033685548     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)