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Volumn 4078, Issue , 2000, Pages 689-696
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Sensing characteristics of ISFET based on AlN thin film
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CAPACITANCE;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC INSULATORS;
PH EFFECTS;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING FILMS;
THIN FILMS;
THRESHOLD VOLTAGE;
ALUMINUM NITRIDE;
CAPACITANCE-VOLTAGE CHARACTERISTICS;
ION SENSITIVE FIELD EFFECT TRANSISTORS;
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EID: 0033718432
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.392108 Document Type: Conference Paper |
Times cited : (9)
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References (15)
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