The heterogeneous integration of GaN thin-film metal-semiconductor-metal photodetectors onto silicon

IEEE Photonics Technology Letters

Volumn 14, Issue 2, 2002, Pages 185-187

  Seo, Sangwoo ^b   Lee, K K ^b   Kang, Sangbeom ^b   Huang, S ^b   Doolittle, William A ^a,b   Jokerst, N M ^a,b   Brown, A S ^a,b   Brooke, M A ^a,b  

^a IEEE

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

GaN photodetector; Heterogeneous integration; Thin film GaN

Indexed keywords

ETCHING; GALLIUM NITRIDE; LITHIUM COMPOUNDS; LOW TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON; SILICA; SUBSTRATES; THIN FILM DEVICES;

GALLIUM NITRIDE THIN FILM METAL SEMICONDUCTOR METAL PHOTODETECTORS; HETEROGENEOUS INTEGRATION; LITHIUM GALLATE; PLASMA-ASSISTED RADIO FREQUENCY MOLECULAR BEAM EPITAXY; SELECTIVE ETCHING;

PHOTODETECTORS;

EID: 0036477577     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.980507     Document Type: Article

References (9)

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