Spatial uniformity of the mechanical properties of 3C-SiC films grown on 4-inch Si wafers as a function of film growth conditions

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 635-638

  Chandra, K ^a   Zorman, C A ^a   Mehregany, M ^a  

^a Case Western Reserve University   (United States)

Author keywords

APCVD; Load Deflection; Mechanical Properties; Residual Stress; Young's Modulus

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELASTIC MODULI; FILM GROWTH; INTERFEROMETRY; MECHANICAL VARIABLES MEASUREMENT; MICROMACHINING; RESIDUAL STRESSES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SILICON WAFERS; THERMAL EFFECTS;

INTERFEROMETRIC LOAD DEFLECTION TECHNIQUE;

SEMICONDUCTING FILMS;

EID: 3743130697     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

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