Pseudomorphic growth of ultrathin cubic 3C-SiC films on Si(100) by temperature programmed organometallic chemical vapor deposition

Journal of Applied Physics

Volumn 85, Issue 5, 1999, Pages 2652-2657

  Hofmann, Jens ^a   Veprek, Stan ^a   Heindl, J ^b  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001650068     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369582     Document Type: Article

References (32)

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32. In this filtering procedure one performs the Fourier transform of the micrograph 8(a) into the two-dimensional spectral space, in which one suppresses all frequencies corresponding to directions other than that parallel to the lattice planes which are running through the interface. The filtered image 8(b) is obtained by Fourier back transform into the real space.