Infrared studies of defects formed during postirradiation anneals of Czochralski silicon

Journal of Applied Physics

Volumn 84, Issue 7, 1998, Pages 3569-3573

  Londos, C A ^a   Sarlis, N V ^a   Fytros, L G ^a  

^a UNIVERSITY OF ATHENS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000079023     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368531     Document Type: Article

References (21)

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