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Volumn 13, Issue 10, 1998, Pages 2763-2774

Crystalline silicon thin films: A promising approach for photovoltaics?

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; CRYSTALLIZATION; GRAIN BOUNDARIES; HYDROGENATION; LIQUID PHASE EPITAXY; PASSIVATION; SILICON WAFERS; SUBSTRATES; THIN FILMS;

EID: 0032187668     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1998.0378     Document Type: Article
Times cited : (15)

References (73)
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    • private communication
    • J. Poortmans, private communication.
    • Poortmans, J.1
  • 33
    • 0040277532 scopus 로고
    • Springer, Berlin
    • T. F. Ciszek, Crystals (Springer, Berlin, 1981). Vol. 5.
    • (1981) Crystals , vol.5
    • Ciszek, T.F.1
  • 47
    • 3843077238 scopus 로고
    • Ph.D. Thesis Katholieke Universiteit Leuven
    • P. De Pauw, Ph.D. Thesis Katholieke Universiteit Leuven (1984).
    • (1984)
    • De Pauw, P.1
  • 48
    • 3843132693 scopus 로고
    • Polysilicon Films and Interfaces, edited by C. Y. Wong, C. V. Thompson, and K-N. Tu Pittsburgh, PA
    • E. Ghitani and S. Martinuzzi, in Polysilicon Films and Interfaces, edited by C. Y. Wong, C. V. Thompson, and K-N. Tu (Mater. Res. Soc. Symp. Proc. 106, Pittsburgh, PA, 1988), p. 225.
    • (1988) Mater. Res. Soc. Symp. Proc. , vol.106 , pp. 225
    • Ghitani, E.1    Martinuzzi, S.2
  • 50
    • 85034486194 scopus 로고    scopus 로고
    • unpublished lifetime-measurements on epitaxial layers, grown at 850 °C in an RTCVD system
    • J. Poortmans, unpublished lifetime-measurements on epitaxial layers, grown at 850 °C in an RTCVD system.
    • Poortmans, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.