Epitaxial growth of diamond thin films on Ir(001)/MgO(001) stacking by two-step dc plasma chemical vapor deposition and their characterization

New Diamond and Frontier Carbon Technology

Volumn 12, Issue 6, 2002, Pages 343-353

  Sawabe, Atsuhito ^a   Yamada, Takatoshi ^a   Okamura, Hiroshi ^a   Katagiri, Masayuki ^a   Suzuki, Kazuhiro ^a,b  

^a AOYAMA GAKUIN UNIVERSITY   (Japan)

^b Toplas Engineering Co Ltd   (Japan)

Author keywords

Chemical vapor deposition; Diamond; Diamond thin film; Direct current; Epitaxial growth; Iridium

Indexed keywords

CATHODOLUMINESCENCE; DIAMOND FILMS; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; IRIDIUM COMPOUNDS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SINGLE CRYSTALS; SURFACE ROUGHNESS; THERMAL EFFECTS;

DIAMOND THIN FILMS;

THIN FILMS;

EID: 0036448294     PISSN: 13449931     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (29)

1. T. Takeuchi, H. Watanabe, S. Yamanaka, H. Okushi and K. Kajimura: Phys. Status Solidi A 174 (1999) 101.
2. H. Watanabe and H. Okushi: Jpn. J. Appl. Phys. 39 (2000) L835.
3. S. Koizumi, T. Murakami, K. Suzuki and T. Inuzuka: Appl. Phys. Lett. 57 (1990) 698.
4. S. Koizumi and T. Inuzuka: Jpn. J. Appl. Phys. 32 (1993) 3920.
5. B.R. Stoner and J.T. Glass: Appl. Phys. Lett. 60 (1992) 698.
6. H. Kawarada, T. Suesada and H. Nagasawa: Appl. Phys. Lett. 66 (1995) 585.
7. H. Kawarada, C. Wild, N. Herres, R. Locher and P. Koidl: J. Appl. Phys. 81 (1997) 3490.
8. P.C. Yang, R. Schlesser, C.A. Wolden, W. Liu, R.F. Davis and Z. Sitar: Appl. Phys. Lett. 70 (1997) 2960.
9. T. Tachibana, Y. Yokota, K. Miyata, K. Kobashi and Y. Shintani: Diamond Relat. Mater. 6 (1997) 266.
10. K. Ohtsuka, K. Suzuki, A. Sawabe and T. Inuzuka: Jpn. J. Appl. Phys. 35 (1996) L1072.
11. K. Ohtsuka, H. Fukuda, K. Suzuki and A. Sawabe: Jpn. J. Appl. Phys. 36 (1997) L1214.
12. M. Schreck, H. Roll and B. Stritzker: Appl. Phys. Lett. 74 (1999) 650.
13. M. Schreck, A. Schury, F. Hormann, H. Roll and B. Stritzker: Appl. Phys. Lett. 91 (2002) 676.
14. N. Taniyama, M. Kudo and H. Kawarada: Jpn. J. Appl. Phys. 40 (2001) L698.
15. N. Yokonaga, Y. Katsu, T. Machida, T. Inuzuka, S. Koizumi and K. Suzuki: Diamond Relat. Mater. 5 (1995) 43.
16. K. Suzuki, K. Ohtsuka and A. Sawabe: New Diamond 13 (1997) 20 (in Japanese).
17. Y.K. Vohra, A. Israel and A. Catledge: Appl. Phys. Lett. 71 (1997) 321.
18. P.J. Dean, E.C. Lightowlers and D.R. Wight: Phys. Rev. A 140 (1965) 352.
19. L.H. Robins, E.C. Lightowlers and D.R. Wight: Phys. Rev. B 48 (1993) 14167.
20. A.T. Collins, G. Davies, H. Kanda and G.S. Woods: J. Phys. C 21 (1988) 1363.
21. A.M. Zaitsev, A.A. Gippius and V.S. Vavilov: Sov. Phys. Semicond. 16 (1982) 252.
22. A.T. Collins and G.S. Wood: J. Phys. C 20 (1987) L797.
23. S. Pennycock, L.M. Brown and A.J. Craven: Phil. Mag. A 41 (1980) 589.
24. J. Raun, K. Kobashi and W.J. Choykke: Appl. Phys. Lett. 60 (1992) 3138.
25. S.B. Iyer, G. Ananthakrishna, B.M. Arora and J. Chandrasekhar: Phys. Rev. B 55 (1997) 4093.
26. A.T. Collins and S.H. Lawson: J. Phys.: Condens. Matter 1 (1989) 6929.
27. A. Sawabe, H. Fukuda, T. Suzuki, Y. Ikuhara and T. Suzuki: Surf. Sci. 467 (2000) L845.
28. K. Suzuki, A. Sawabe and T. Inuzuka: Jpn. J. Appl. Phys. 29 (1990) 153.
29. H. Okamura, T. Yamada, K. Suzuki and A. Sawabe (in preparation).