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Volumn , Issue , 2002, Pages 155-158

An InP HBT common-base amplifier with tunable transimpedance for 40 GB/S applications

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRIC IMPEDANCE; HETEROJUNCTION BIPOLAR TRANSISTORS; PHOTODETECTORS;

EID: 0036442433     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (8)

References (10)
  • 1
    • 0030419880 scopus 로고    scopus 로고
    • 27 Ghz bandwidth high speed monolithic integrated optoelectronic photoreceiver consisting of a waveguide fed photodiode and an InAIAs/InGaAs-HFET-traveling wave amplifier
    • Orlando, FL
    • S. van Waasen, et al., "27 Ghz Bandwidth High Speed Monolithic Integrated Optoelectronic Photoreceiver consisting of a Waveguide Fed Photodiode and an InAIAs/InGaAs-HFET-Traveling Wave Amplifier," 1996 IEEE GaAs IC Symp. Dig., Orlando, FL, pp. 258-261.
    • (1996) IEEE GaAs IC Symp. Dig. , pp. 258-261
    • Van Waasen, S.1
  • 2
    • 0032098840 scopus 로고    scopus 로고
    • InP-Based HBT technology for next generation light-wave communications
    • April
    • K.W. Kobayashi, et al.," InP-Based HBT Technology for Next Generation Light-Wave Communications," Microwave Journal, April 1998.
    • (1998) Microwave Journal
    • Kobayashi, K.W.1
  • 3
    • 0035175743 scopus 로고    scopus 로고
    • InP and GaAs components for 40 bps applications
    • D. Streit, R. Lai, et al., 'InP and GaAs Components for 40 bps Applications," 2001 IEEE GaAs IC Symp. Dig., pp. 247-250.
    • (2001) IEEE GaAs IC Symp. Dig. , pp. 247-250
    • Streit, D.1    Lai, R.2
  • 5
    • 33645277600 scopus 로고
    • Integrated high frequency low-noise current-mode optical transimpedance preamplifiers: Theory and practice
    • Oct.
    • Tongtod Vanisri and Chris Toumazou, "Integrated High Frequency Low-Noise Current-Mode Optical Transimpedance Preamplifiers: Theory and Practice," IEEE J. Solid-state Circuits, vol. 301, no. 6, Oct. 1995, pp. 677-685.
    • (1995) IEEE J. Solid-state Circuits , vol.301 , Issue.6 , pp. 677-685
    • Vanisri, T.1    Toumazou, C.2
  • 6
    • 0034443429 scopus 로고    scopus 로고
    • 49-Ghz preamplifier with a transimpedance gain of 52 Db-Ohm using InP HEMTs
    • H. Shigematsu, et al., "49-Ghz Preamplifier with a Transimpedance Gain of 52 Db-Ohm Using InP HEMTs," 2000 IEEE GaAs IC Symp. Dig., pp. 197-200.
    • (2000) IEEE GaAs IC Symp. Dig. , pp. 197-200
    • Shigematsu, H.1
  • 7
    • 0034227121 scopus 로고    scopus 로고
    • InP-InGaAs single HBT technology for photoreceiver OEIC's at 40 Gb/s and beyond
    • July
    • D. Huber, et al., "InP-InGaAs Single HBT Technology for Photoreceiver OEIC's at 40 Gb/s and Beyond," Journal of Lightwave Technology, vol. 18, No. 7, July 2000, pp. 9921000.
    • (2000) Journal of Lightwave Technology , vol.18 , Issue.7 , pp. 992-1000
    • Huber, D.1
  • 8
    • 0036070470 scopus 로고    scopus 로고
    • A 0.15um GaAs MHEMT transimpedance amplifier IC for 40-Gb/s applications
    • Seattle, Washington
    • C.F. Campbell, et al., "A 0.15um GaAs MHEMT Transimpedance Amplifier IC for 40-Gb/s Applications," 2002 IEEE MTT-S Symp. Dig., Seattle, Washington, pp. 79-82.
    • (2002) IEEE MTT-S Symp. Dig. , pp. 79-82
    • Campbell, C.F.1
  • 9
    • 0036440139 scopus 로고    scopus 로고
    • A transimpedance amplifier for OC-768 applications designed using a SiGE HBT BiCMOS technology
    • Anaheim, CA
    • S.A. Steidl, et al., "A Transimpedance Amplifier for OC-768 Applications Designed using a SiGE HBT BiCMOS Technology," 2002 OFC, Anaheim, CA, pp. 276-277.
    • (2002) OFC , pp. 276-277
    • Steidl, S.A.1
  • 10
    • 24544477209 scopus 로고    scopus 로고
    • A common-base amplifier with high input overload and tunable transimpedance
    • K.W. Kobayashi, "A common-base amplifier with high input overload and tunable transimpedance," patent pending, 2002.
    • (2002) Patent pending
    • Kobayashi, K.W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.