InP and GaAs components for 40 Gbps applications

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2001, Pages 247-250

  Streit, D ^a   Lai, R ^a   Gutierrez Aitken, A ^a   Siddiqui, M ^a   Allen, B ^a   Chau, A ^a   Beale, W ^a   Oki, A ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIGITAL CIRCUITS; FIBER OPTICS; HETEROJUNCTION BIPOLAR TRANSISTORS; MODULATORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DIODES;

MODULATOR DRIVERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035175743     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. 0.1 μm InGaAs/AlGaAs/GaAs HEMT MMIC production process for Ka-band LNAs
2. A high volume 0.1 μm InP HEMT process for applications from 2 GHz to 200 GHz
3. Ultra high speed direct digital synthesizer using InP DHBT technology