A transimpedance amplifier for OC-768 applications designed using a SiGe HBT BiCMOS technology

Conference on Optical Fiber Communication, Technical Digest Series

Volumn 70, Issue , 2002, Pages 276-277

  Steidl, S A ^a   Rowe, D ^a   Krawczyk, T W ^a   Wong, P ^a   Tam, A ^a   Hornbuckle, C ^a  

^a Sierra Monolithics Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC CONVERTERS; ENERGY DISSIPATION; GAIN MEASUREMENT; HETEROJUNCTION BIPOLAR TRANSISTORS; PHOTODIODES; RESISTORS;

TRANSIMPEDANCE AMPLIFIERS (TIA);

DIFFERENTIAL AMPLIFIERS;

EID: 0036440139     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. S. Subbanna, et. al., "Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICs," Proc. IEEE 2001 CICC, San Diego, CA, May 2001, pp. 559-566.
2. T. Vanisri and C. Toumazou, "Integrated high frequency low-noise current-mode optical transimpedance preamplifiers: theory and practice," IEEE JSSC, Vol. 30, No. 6, June 1995, pp. 677-685.
3. P.R. Gray and R.G. Meyer, Analysis and Design of Analog Integrated Circuits. 3rd Ed., (John Wiley & Sons, Inc., New York, 1993).