40 Gbit/s 27-1 PRBS generator IC in SiGe bipolar technology

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2002, Pages 124-127

  Knapp, Herbert ^a   Wurzer, Martin ^a   Meister, Thomas F ^a   Böck, Josef ^a   Aufinger, Klaus ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; FLIP FLOP CIRCUITS; MULTIPLEXING; SEMICONDUCTING SILICON COMPOUNDS; SHIFT REGISTERS;

PSEUDO-RANDOM BIT SEQUENCE (PRBS) GENERATORS;

INTEGRATED CIRCUITS;

EID: 0036440677     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. M.G. Chen and J.K. Notthoff, "A 3.3-V 21-Gb/s PRBS Generator in AlGaAs/GaAs HBT Technology," IEEE Journal of Solid-State Circuits, vol. 35, no. 9, pp. 1266-1270, Sept. 2000.
2. F. Schumann and J. Böck, "Silicon bipolar IC for PRBS testing generates adjustable bit rates up to 25 Gbit/s," Electronics Letters, vol. 33, no. 24, pp. 2022-2023, Nov. 1997.
3. O. Kromat, U. Langmann, G. Hanke, and W.J. Hillery, "A 10-Gb/s Silicon Bipolar IC for PRBS Testing," IEEE Journal of Solid-State Circuits, vol. 33, no. 1, pp. 76-85, Jan. 1998.
4. F. Sinnesbichler, A. Ebberg, A. Felder, and R. Weigel, "Generation of High-Speed Pseudorandom Sequences Using Multiplex-Techniques," IEEE Transactions on Microwave Theory and Techniques, vol. 44, no. 12, pp. 2738-2742, Dec. 1996.
5. H.-M. Rein and M. Möller, "Design Considerations for Very-High-Speed Si-Bipolar IC's Operating up to 50Gb/s," IEEE Journal of Solid-State Circuits, vol. 31, no. 8, pp. 1076-1090, Aug. 1996.
6. J. Böck, H. Schäfer, H. Knapp, D. Zöschg, K. Aufinger, M. Wurzer, S. Boguth, R. Stengl, R. Schreiter, and T.F. Meister, "High-Speed SiGe:C Bipolar Technology," International Electron Devices Meeting, Dec. 2001, pp. 344-347.