Investigation of thermal properties in fabricated 4H-SIC high-power bipolar transistors

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1337-1340

  Danielsson, E ^a   Zetterling, C M ^a   Ostling M ^a   Forsberg, U ^b   Janzen E ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY KTH   (Sweden)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Bipolar transistors; Breakdown voltage; Thermal conductivity

Indexed keywords

BIPOLAR TRANSISTORS; ELECTRIC BREAKDOWN; FABRICATION; POWER BIPOLAR TRANSISTORS; SILICON CARBIDE; TRANSISTORS; ELECTRIC CURRENTS; GAIN MEASUREMENT; THERMAL CONDUCTIVITY;

CURRENT GAINS; HIGH POWER DENSITY; INFRA-RED CAMERAS; JUNCTION TEMPERATURES; PHYSICAL DEVICES; SELF-HEATING EFFECT; TEMPERATURE INCREASE; THERMAL IMAGES; BIPOLAR JUNCTION TRANSISTORS;

THERMAL CONDUCTIVITY; BIPOLAR TRANSISTORS;

EID: 0036435325     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1337     Document Type: Conference Paper

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