Isothermal I-V characteristics of 4H-SiC p-n diodes with low series differential resistivity at avalanche breakdown

Materials Research Society Symposium-Proceedings

Volumn 622, Issue , 2000, Pages T181-T186

  Vassilevski, Konstantin V ^a,b   Zekentes, Konstantinos ^b   Zorenko, Alexandr V ^c   Romanov, Leonid P ^d  

^a INSTITUTE OF COMPUTER SCIENCE   (Greece)

^b IOFFE INSTITUTE   (Russian Federation)

^c State Research Institute 'Orion'   (Ukraine)

^d Joint Stock Company Svetlana Electronpribor   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTRONS; SILICON CARBIDE; THERMAL CONDUCTIVITY; TRANSIT TIME DEVICES;

PULSED POWER DENSITY;

SEMICONDUCTOR DIODES;

EID: 0034429064     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: 10.1557/proc-622-t1.8.1     Document Type: Article

References (16)