X-band silicon carbide IMPATT oscillator

Materials Research Society Symposium Proceedings

Volumn 680, Issue , 2001, Pages 312-317

  Vassilevski, Konstantin V ^a   Zorenko, Alexandr V ^b   Zekentes, Konstantinos ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b State Scientific and Research Institute Orion   (Ukraine)

^c INSTITUTE OF COMPUTER SCIENCE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; MICROWAVE OSCILLATORS; SILICON CARBIDE;

OUTPUT POWER; PULSE DURATION;

IMPATT DIODES;

EID: 34249864131     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-680-e10.11     Document Type: Conference Paper

References (22)

1. W. T. Read, Bell Syst. Tech. J. 37, 401 (1958).
2. S. Tager, A. I. Melnikov, G. P. Kobelkov, A. M. Tsebiev, USSR author certificate No. 185965 and diploma on scientific discovery No. 24, priority of 27.X.1959.
3. R. W. Keyes, Silicon Carbide 1973, Columbia, Proceedings of the Conference, 534 (1974).
4. W. Muench, E. Pettenpaul, J. Appl. Phys., 48, 4823 (1977).
5. A. S. Tager, Izvestia VUZov SSSR, Radioelectronika, XXII, No. 10, 5 (1979) [in Russian].
6. A. S. Tager, Proc. of Second All-Union Conf. "Problems of Physics and Technology of Wide Band Gap Semiconductors", Leningrad, 211 (1979) [in Russian].
7. I. Mehdi, G. I. Haddad, R. K. Mains, J. Appl. Phys. 64, 1533 (1988).
8. K. V. Vassilevski, Sov. Physics Semicond. 26, 994 (1992).
9. V. I. Sankin, A. A. Lepneva, Mater. Sci. Forum 338-342, 769 (2000).
10. I. A. Khan, J. A. Cooper, Jr., Mater. Sci. Forum 338-342, 761 (2000).
11. K. V. Vassilevski, V. A. Dmitriev, A. V. Zorenko, J. Appl. Phys. 74, 7612 (1993).
12. P. G. Neudeck, C. Fazi, IEEE Trans Electron Devices 18, No. 3, 96 (1997).
13. C. H. Carter, Jr., V. F. Tsvetkov, R.G. Glass, D. Henshall, M. Brady, S. G. Miller, O. Kordina, K. Irvine, J. A. Edmond, H.-S. Kong, R. Singh, S. T. Allen, J. W. Palmour, Mat. Sci. and Eng. B 61-62, 1 (1999).
14. K. V. Vassilevski, K, Zekentes, G. Constantinidis, N, Papanicolaou, I. P. Nikitina, A. I. Babanin, Mater. Sci. Forum 338-342, 1017 (2000).
15. K. Vassilevski, K. Zekentes, G. Constantinidis, I. Nikitina, Mat. Sci. and Eng. B 80, 370 (2001).
16. K. Vassilevski, K. Zekentes, G. Constantinidis, A. Strel'chuk, Solid State Electronics 44, 1173 (2000).
17. A. O. Konstantinov, Q. Wahab, N. Nordell, U. Linderfelt, Mat. Sci. Forum, 264-268, 513 (1998).
18. K. V. Vassilevski, K. Zekentes, A. V. Zorenko, L. P. Romanov, IEEE Electron Device Lett. 21, 485 (2000).
19. K. Vassilevski, K. Zekentes, A. Zorenko, L. Romanov, Mat. Res. Soc. Symp. 622, T1.8.1 (2000).
20. K. V. Vassilevski, A. V. Zorenko, K. Zekentes, Electronics Letters, 37, 467 (2001).
21. K. Vassilevski, K. Zekentes, E. Bogdanova, M. Lagadas, A. Zorenko, Mater. Sci. Forum. 353-356, 735 (2001).
22. S. M. Sze, Physics of Semiconductor Devices, Second Edition (John Wiley & Sons, Inc, USA, 1981) p. 602.